FQA11N90C MOSFET 900V N-Ch Q-FET advance C-Series
Category:
N P Channel Mosfet
Specifications
Transistor Type::
1 N-Channel
Vgs - Gate-Source Voltage::
- 30 V, + 30 V
Highlight:
FQA11N90C
,MOSFET 900V
,FQA11N90C MOSFET
Introduction
| Product Attribute | Attribute Value |
| Manufacturer: | onsemi |
| Product Category: | MOSFET |
| RoHS: | Details |
| Technology: | Si |
| Mounting Style: | Through Hole |
| Package / Case: | TO-3PN-3 |
| Transistor Polarity: | N-Channel |
| Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 900 V |
| Id - Continuous Drain Current: | 11 A |
| Rds On - Drain-Source Resistance: | 1.4 Ohms |
| Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Minimum Operating Temperature: | - 55 C |
| Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 300 W |
| Channel Mode: | Enhancement |
| Packaging: | Tube |
| Brand: | onsemi / Fairchild |
| Configuration: | Single |
| Fall Time: | 85 ns |
| Forward Transconductance - Min: | 9 S |
| Height: | 20.1 mm |
| Length: | 16.2 mm |
| Product Type: | MOSFET |
| Rise Time: | 130 ns |
| Factory Pack Quantity: | 30 |
| Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel |
| Type: | MOSFET |
| Typical Turn-Off Delay Time: | 130 ns |
| Typical Turn-On Delay Time: | 60 ns |
| Width: | 5 mm |
| Part # Aliases: | FQA11N90C_NL |
| Unit Weight: | 0.162260 oz |
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