IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds
manufacturer:
IXYS
Description:
IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds
Category:
IGBT Module
In-stock:
100PCS
Price:
Email us for details
Payment Method:
T/T, Western Union
Specifications
Date Code:
Newest Code
Shipping By:
DHL/UPS/Fedex
Condition:
New*Original
Warranty:
365days
Lead Free:
Rohs Compliant
Lead Times:
Immediately Shipment
Introduction
IXFN38N100Q2 Discrete Semiconductor Modules 38 Amps 1000V 0.25 Rds
| IXYS | |
| Product Category: | Discrete Semiconductor Modules |
| RoHS: | Details |
| Power MOSFET Modules | |
| Si | |
| - 30 V, + 30 V | |
| Chassis Mount | |
| SOT-227-4 | |
| - 55 C | |
| + 150 C | |
| IXFN38N100 | |
| Tube | |
| Brand: | IXYS |
| Configuration: | Single |
| Fall Time: | 15 ns |
| Height: | 9.6 mm |
| Id - Continuous Drain Current: | 38 A |
| Length: | 38.23 mm |
| Number of Channels: | 1 Channel |
| Pd - Power Dissipation: | 890 W |
| Product Type: | Discrete Semiconductor Modules |
| Rds On - Drain-Source Resistance: | 250 mOhms |
| Rise Time: | 28 ns |
| Subcategory: | Discrete Semiconductor Modules |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 57 ns |
| Typical Turn-On Delay Time: | 25 ns |
| Vds - Drain-Source Breakdown Voltage: | 1 kV |
| Width: | 25.42 mm |
| Unit Weight: | 1.058219 oz |
Tel: +86-755-23606019
Address: Room 1205-1207,Nanguang building,Huafu Road, Futian District,Shenzhen,Guangdong,China
Laneya
Telephone:+86-13420902155
E-mail:sales@wisdtech.com.cn
Wechat:laneyatao66
WhatsApp:+8613420902155
Skype:sales@wisdtech.com.cn
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Stock:
100PCS
MOQ:
1pcs
