ZXTN25100BFHTA Bipolar (BJT) Transistor NPN 100 V 3 A 160MHz 1.25 W RF Transistors

Diodes Incorporated | |
Product Category: | Bipolar Transistors - BJT |
RoHS: | Details |
SMD/SMT | |
SOT-23-3 | |
NPN | |
Single | |
100 V | |
170 V | |
7 V | |
200 mV | |
3 A | |
1.81 W | |
160 MHz | |
- 55 C | |
+ 150 C | |
ZXTN25100 | |
Reel | |
Cut Tape | |
MouseReel | |
Brand: | Diodes Incorporated |
Height: | 1 mm |
Length: | 3.05 mm |
Product Type: | BJTs - Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Width: | 1.4 mm |
Unit Weight: | 0.000282 oz |
Product Status
|
Active
|
Transistor Type
|
|
Current - Collector (Ic) (Max)
|
3 A
|
Voltage - Collector Emitter Breakdown (Max)
|
100 V
|
Vce Saturation (Max) @ Ib, Ic
|
250mV @ 300mA, 3A
|
Current - Collector Cutoff (Max)
|
50nA (ICBO)
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
100 @ 10mA, 2V
|
Power - Max
|
1.25 W
|
Frequency - Transition
|
160MHz
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
Mounting Type
|
Surface Mount
|
Package / Case
|
TO-236-3, SC-59, SOT-23-3
|
Supplier Device Package
|
SOT-23-3
|
Features
BVcEo > 100V
BVcEx > 170V Forward Blocking Voltage
BVEco > 6V Reverse Blocking Voltage
Ic = 3A high Continuous Collector Current
Low Saturation Voltage, VCE(SAT) < 80mV @1A
RCE(SAT)= 67mQ for a Low Equivalent On-Resistance
1.25W Power Dissipation
hFE Specified up to 3A for High Current Gain Hold Up
Complementary PNP Type: ZXTP25100BFH
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free.“Green" Device (Note 3)
Qulified to AEC-Q101 Standards for High Rellbllity
Mechanical Data
Case: SOT23
Case Material: molded plastic, "Green" Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J -STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 2080@3)
Weight 0.008 grams (Approximate)
Applications
●Lamp Relay and Solenoid Drivers
●General Switching in Automotive and Industrial Applications
●Motor Drive and Control
- Type: NPN (Negative-Positive-Negative) Bipolar Junction Transistor
- Voltage Rating: 100 V (maximum collector-emitter voltage)
- Current Rating: 3 A (maximum collector current)
- Frequency: 160 MHz (maximum frequency at which it can operate effectively)
- Power Dissipation: 1.25 W (maximum power that can be dissipated by the transistor)
- Package Type: Surface Mount (SMT) package, which is a type of package that allows
- for mounting on the surface of a printed circuit board (PCB) without requiring through-hole soldering.