CY7C1041GN30-10ZSXI SRAM - Asynchronous Memory IC 4Mbit Parallel Integrated Circuits ICs
CY7C1041GN30-10ZSXI SRAM - Asynchronous Memory IC 4Mbit Parallel
| CYPRESS | |
| Product Category: | SRAM |
| RoHS: | Details |
| 4 Mbit | |
| 256 k x 16 | |
| 10 ns | |
| - | |
| Parallel | |
| 3.6 V | |
| 2.2 V | |
| 45 mA | |
| - 40 C | |
| + 85 C | |
| SMD/SMT | |
| TSOP-44 | |
| Tray | |
| Brand: | CYPRESS |
| Memory Type: | Volatile |
| Moisture Sensitive: | Yes |
| Product Type: | SRAM |
| Subcategory: | Memory & Data Storage |
| Type: | Asynchronous |
| Unit Weight: | 0.015988 oz |
Functional Description
CY7C1041GN is high-performance CMOS fast static RAM
Organized as 256K words by 16-bits.
Data writes are performed by asserting the Chip Enable (CE) and
Write Enable (WE) inputs LOW, while providing the data on /O.
through /015 and address on Ao through A17 pins. The Byte High
Enable (BHE) and Byte Low Enable (BLE) inputs control write
operations to _the upper and lower bytes of the specified memory
location. BHE controls IOg through /O15 and BL E controls /O.
through l/O7.
Data reads are performed by asserting the Chip Enable (CE) and
Output Enable (OE) inputs LOW and providing the required
address on the address lines. Read data is accessible on the I/O
lines (I/Oo through 1015). Byte accesses can be performed by
asserting the required byte enable signal (BHE or BLE) to read
either the upper byte or the lower byte of data from the specified
address location.
All I/Os (I/Oo through /O15) are placed in a high-impedance state
during the following events:
■The device is deselected (CE HIGH)
m The control signals (OE, BLE, BHE) are de -asserted
Features
■High speed
tAA= 10 ns/ 15 ns
■Low active and standby currents
Active current lcc = 38-mA typical
Standby current: Ise2 = 6-mA typical
■Operating voltage range: 1.65 V to 2.2 V, 2.2 V to 3.6 V, and
4.5Vto5.5 V
■1.0-V data retention
■TTL-compatible inputs and outputs
■Pb-free 44-pin SOJ, 44-pin TSOP Il, and 48-ball VFBGA
packages
Memory Type: Volatile
Memory Format: SRAM
Technology: SRAM - Asynchronous
Memory Size: 4Mb
Memory Organization: 256k x 16
Memory Interface: Parallel
Write Cycle Time - Word, Page: 10ns
Access Time: 10ns
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Supplier Device Package: 44-TSOP II
