IS61WV5128BLL-10TLI SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v Integrated Circuits ICs

IS61WV5128BLL-10TLI SRAM 4Mb (512k x 8) 10ns Async SRAM 3.3v

DESCRIPTION
The ISSI IS61WV5128Axx and IS61/64WV5128Bxx
are very high-speed, low power, 524,288-word by
8-bit CMOS static RAMs. The IS61 WV5128Axx and
IS61/64WV5128Bxx are fabricated using ISST's high-
performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When CE is HIGH (deselected), the device assumes
a standby mode at which the power dissipation can be
reduced down with CMOS input levels.
The IS61WV5128Axx and IS61/64WV5128Bxx operate
from a single power supply.
The IS61WV51 28ALL and IS61/64WV5128BLL are avail-
able in 36-pin 400-mil SOJ, 36-pin mini BGA, and 44-pin
TSOP (Type I) packages.
The IS61WV5128ALS and IS6 1/64WV5128BLS are
available in 32-pinTSOP (Type I), 32-pin sTSOP (Type l),
32-pin SOP and 32-pin TSOP (Type I1) packages.

FEATURES
HIGH SPEED: (IS61/64WV5128ALLBLL)
●High-speed access time:8, 10, 20 ns
●Low Active Power: 85 mW (typical)
●Low stand-by power: 7 mW (typical)
CMOS standby
LOW POWER: (IS61/64WV5128AL S/BLS)
●High-speed access time: 25, 35 ns
●Low Active Power: 35 mW (typical)
●Low stand-by power: 0.6 mW (typical)
CMOS standby
●Single power supply
- Voo 1.65V to 2.2V (IS61 WV5128Axx)
- VoD 2.4V to 3.6V (IS61/64WV5128Bxx)
●Fully static operation: no clock or refresh
required
●Three state outputs
●Industrial and Automotive temperature support
●Lead-free available

The IS61WV5128BLL-10TLI is a specific part number for a memory device. It is a 128Mb (megabit) asynchronous

static random access memory (SRAM) module manufactured by Integrated Silicon Solution Inc. (ISSI).

Here is some information about this particular memory device:

• Memory capacity: 128 megabits (Mb) or 16 megabytes (MB)
• Memory type: Asynchronous SRAM
• Access time: 10 ns (nanoseconds)
• Organization: 4 banks x 4,096 rows x 2,048 columns
• Package type: 44-pin TSOP (Thin Small-Outline Package)
• Temperature range: Industrial (-40°C to +85°C)
• Voltage Supply: The IS61WV5128BLL-10TLI operates with a voltage supply range of 2.7V to 3.6V.
• Density: The memory device has a density of 128 megabits (Mb), which is equivalent to 16 megabytes (MB).
• Access Time: The access time specifies the speed at which data can be read from or written to the memory.
• In this case, the access time is 10 nanoseconds (ns), which indicates a relatively fast operation.
• Organization: The memory is organized into 4 banks, with each bank consisting of 4,096 rows and 2,048 columns.
• This organization allows for efficient storage and retrieval of data.
• Package Type: The IS61WV5128BLL-10TLI comes in a 44-pin TSOP (Thin Small-Outline Package) form factor.
• This package is commonly used for integrated circuits and provides a compact design for easy integration into
• electronic systems.
• Temperature Range: The memory is designed to operate within an industrial temperature range of -40°C to +85°C.
• This wide temperature range allows for reliable operation in various environments.