MX25L6445EMI-10G FLASH - NOR Memory IC 64Mbit SPI 104 MHz 16-SOP Integrated Circuits ICs
Category:
Integrated Circuits ICs
Price:
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Payment Method:
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Specifications
Date Code:
Newest Code
Shipping By:
DHL/UPS/Fedex
Condition:
New*Original
Warranty:
365days
Lead Free:
Rohs Compliant
Lead Times:
Immediately Shipment
Package:
SOP16
Mounting Style:
SMD/SMT
Highlight:
MX25L6445EMI-10G
,Memory IC 64Mbit
,MX25L6445EMI-10G Integrated Circuits ICs
Introduction
MX25L6445EMI-10G FLASH - NOR Memory IC 64Mbit SPI 104 MHz 16-SOP
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Category
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Mfr
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Series
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Product Status
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Not For New Designs
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DigiKey Programmable
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Verified
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Memory Type
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Non-Volatile
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Memory Format
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Technology
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FLASH - NOR
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Memory Size
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Memory Organization
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8M x 8
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Memory Interface
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SPI
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Clock Frequency
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104 MHz
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Write Cycle Time - Word, Page
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300µs, 5ms
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Voltage - Supply
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2.7V ~ 3.6V
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Operating Temperature
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-40°C ~ 85°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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Supplier Device Package
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16-SOP
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Base Product Number
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Description:
Serial Peripheral Interface compatible - Mode 0 and Mode 3
●64Mb: 67,108,864 x 1 bit structure or 33,554,432 x 2 bits (two /0 mode)
structure or 16,777,216x 4 bits (four 10 mode) structure
●2048 Equal Sectors with 4K bytes each
- Any Sector can be erased individually
●256 Equal Blocks with 32K bytes each
- Any Block can be erased individually
●128 Equal Blocks with 64K bytes each
- Any Block can be erased individually
●Power Supply Operation
- 2.7 to 3.6 volt for read, erase, and program operations
●Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
●High Performance
VCC= 2.7~3.6V
- Normal read
- 50MHz
- Fast read (Normal Serial Mode)
.1 10: 104MHz with 8 dummy cycles
-2 l/O: 70MHz with 4 dummy cycles
- 4 IO: 70MHz with 6 dummy cycles
- Fast read (Double Transfer Rate Mode)
-1 1O: 50MHz with 6 dummy cycles
- 2 IO: 50MHz with 6 dummy cycles
-410: 50MHz with 8 dummy cycles
- Fast program time: 1.4ms(typ.) and 5ms(max. )/page (256- byte per page)
- Byte program time: 9us (typical)
Continuously Program mode (automatically increase address under word program mode)
. Fast erase time: 60ms (typ./sector (4K-byte per sector); 0.7s(typ.) /block (64K-byte per block); 50s(typ.) /chip
●Low Power Consumption
- Low active read current: 19mA(max.) at 104MHz, 15mA(max.) at 66MHz and 10mA(max.) at 33MHz
- Low active programming current: 25mA (max.)
- Low active erase current: 25mA (max.)
- Low standby current: 50uA (max.)
- Deep power down current: 20uA (max.)
Typical 100,000 erase/program cycles
20 years data retention
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Stock:
MOQ:
1pcs
