MX25V4006EM1I-13G FLASH - NOR Memory IC 4Mbit SPI 75 MHz 8-SOP Integrated Circuits ICs
Category:
Integrated Circuits ICs
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Specifications
Date Code:
Newest Code
Shipping By:
DHL/UPS/Fedex
Condition:
New*Original
Warranty:
365days
Lead Free:
Rohs Compliant
Lead Times:
Immediately Shipment
Package:
SOP8
Mounting Style:
SMD/SMT
Highlight:
MX25V4006EM1I-13G
,FLASH - NOR Memory IC
,MX25V4006EM1I-13G Integrated Circuits ICs
Introduction
MX25V4006EM1I-13G FLASH - NOR Memory IC 4Mbit SPI 75 MHz 8-SOP
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Category
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Mfr
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Series
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Product Status
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Not For New Designs
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| Package | Tube |
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DigiKey Programmable
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Verified
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Memory Type
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Non-Volatile
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Memory Format
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Technology
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FLASH - NOR
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Memory Size
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Memory Organization
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512K x 8
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Memory Interface
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SPI
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Clock Frequency
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75 MHz
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Write Cycle Time - Word, Page
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50µs, 1ms
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Voltage - Supply
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2.35V ~ 3.6V
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Operating Temperature
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-40°C ~ 85°C (TA)
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Mounting Type
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Surface Mount
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Package / Case
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Supplier Device Package
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8-SOP
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Base Product Number
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Description:
The device features a serial peripheral interface and sofware protocol allowing operation on a simple
4-wire bus.
The four bus signals are a clock input (SCLK), a serial data input (SI), a serial data output (SO), and
a chip select (CS#).Serial access to the device is enabled by CS# input. When it is in Dual Output read
mode, the SI and so pins become SIO0 and SIO1 pins for data output. The device provides sequential
read operation on the whole chip. After program/erase command is issued, auto program/erase
algorithms which program/erase and verify the speci-fied page or sector/block locations will be
executed. Program command is executed on byte basis, or page basis, or word basis. Erase command
is executed on sector, block, or whole chip basis. To provide user with ease of interface, a status
register is included to indicate the status of the chip. The status read command can be issued to detect
completion status of a program or erase operation via WIP bit.
When the device is not in operation and CS# is high, it is put in standby mode.
The device utilizes Macronix's proprietary memory cell, which reliably stores memory contents even after
100,000 program and erase cycles.
FEATURES
GENERAL
●Supports Serial Peripheral Interface - Mode 0 and Mode 3
●4,194,304x 1 bit structure or 2,097,152 x 2 bits (Dual Output mode) structure
●128 Equal Sectors with 4K byte each
- Any Sector can be erased individually
●8 Equal Blocks with 64K byte each
- Any Block can be erased individually
●Single Power Supply Operation
- 2.35 to 3.6 volt for read, erase, and program opera-tions
●Latch-up protected to 100mA from -1V to Vcc +1V
PERFORMANCE
●High Performance
- Fast access time: 75MHz serial clock
- Serial clock of Dual Output mode: 70MHz
- Fast program time:
0.6ms(typ.) and 1ms(max./page (256-byte per page)
Byte program time: 9us (typ.)
- Fast erase time:
40ms(typ.)/sector (4K-byte per sector);
0.4s(typ./block (64K-byte per block)
●Low Power Consumption
- Low active read current:
12mA(max.) at 75MHz and 4mA(max.) at 33MHz
- Low active programming current: 15mA (typ.)
- Low active sector erase current: 9mA (typ.)
- Low standby current: 15uA (typ.)
-Deep power-down mode 2uA (typ.)
●Minimum 100,000 erase/program cycles
●20 years data retention
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Stock:
MOQ:
1pcs
