S34ML02G200TFI000 FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP Integrated Circuits ICs
Category:
Integrated Circuits ICs
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Specifications
Product Category:
RF MOSFET Transistors
Packaging:
Standard
Factory Pack Quantity:
200PCS
Subcategory:
Interface ICs
Date Code:
Newest Code
Shipping By:
DHL/UPS/Fedex
Condition:
New*Original
Warranty:
365days
Lead Free:
Rohs Compliant
Lead Times:
Immediately Shipment
Package:
TSOP48
Mounting Style:
SMD/SMT
Highlight:
S34ML02G200TFI000
,S34ML02G200TFI000 Integrated Circuits ICs
Introduction
S34ML02G200TFI000 FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP
| SPANSION | |
| Product Category: | NAND Flash |
| RoHS: | Details |
| SMD/SMT | |
| S34ML02G2 | |
| 2 Gbit | |
| Parallel | |
| 256 M x 8 | |
| Asynchronous | |
| 8 bit | |
| 2.7 V | |
| 3.6 V | |
| 35 mA | |
| - 40 C | |
| + 85 C | |
| Tray | |
| Brand: | SPANSION |
| Memory Type: | NAND |
| Moisture Sensitive: | Yes |
| Product: | NAND Flash |
| Product Type: | NAND Flash |
| Subcategory: | Memory & Data Storage |
General Description
The Cypress S34ML 08G18-Gb NAND is offered in 3.3 Vcc with x8 I/0 interface. This document
contains information for the S34ML 08G1 device, which is a dual-die stack of two S34ML04G1
die. For detailed specifications, please refer to the discrete die datasheet: S34ML04G1.
Distinctive Characteristics
Density
-8 Gb(4Gbx2)
Architecture (For each 4 Gb device)
- Input / Output Bus Width: 8-bits
- Page Size: (2048 + 64) bytes; 64 bytes is spare area
- Block Size: 64 Pages or (128k + 4k) bytes
- Plane Size
- 2048 Blocks per Plane or (256M + 8M) bytes
- Device Size
- 2 Planes per Device or 512 Mbyte
■NAND Flash Interface
- Open NAND Flash Interface (ONFI) 1.0 compliant
- Address, Data and Commands multiplexed
Supply Voltage
- 3.3 V device: Vcc =2.7V ~ 3.6 V
Performance
■Page Read 1 Program
- Random access: 25 μs (Max)
- Sequential access: 25 ns (Min)
- Program time 1 Multiplane Program time: 200 μs (Typ)
Block Erase 1 Multiplane Erase (S34ML04G1)
- Block Erase time: 3.5 ms (Typ)
■Security
- One Time Programmable (OTP) area
- Hardware program/erase disabled during power transition
■Additional Features
- Supports Multiplane Program and Erase commands
- Supports Copy Back Program
- Supports Multiplane Copy Back Program
- Supports Read Cache
Electronic Signature
- Manufacturer ID: 01h
■Operating Temperature
- Industrial: - 40 °C to 85 °C
- Automotive: - 40 °C to 105.C
■Relibility
- 100,000 Program 1 Erase cycles (Typ)
(with 1 bit/512 + 16 byte ECC)
- 10 Year Data retention (Typ)
- Blocks zero and one are valid and will be valid for at least
1000 program-erase cycles with ECC
■Package Options
- Lead Free and Low Halogen
- 48-Pin TSOP 12x 20x 1.2 mm
- 63-Ball BGA9x 11 x 1 mm
Specifications:
- Density: 2Gb (256MB)
- Organization: 2048 blocks x 64 pages x 2112 bytes
- Interface: Toggle Mode 2.0
- Voltage Supply: 3.3V
- Operating Temperature Range: -40°C to +85°C
- Page Read Time: 25μs (typical)
- Page Program Time: 200μs (typical)
- Erase Time: 2ms (typical)
- Endurance: 100,000 program/erase cycles (minimum)
- Data Retention: 10 years (minimum) [1]
Features:
- High-performance NAND flash memory
- Reliable and durable storage solution
- Suitable for demanding applications
- Toggle Mode 2.0 interface for fast data transfer
- Wide operating temperature range for versatile usage [1]
Applications:
- Automotive: Used in infotainment systems, navigation systems, and instrument clusters.
- Industrial: Used in industrial automation, robotics, and control systems.
- Networking: Used in routers, switches, and network storage devices.
- Consumer Electronics: Used in smartphones, tablets, cameras, and portable media players [1].
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