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TS3USB221EDRCR USB Switch ICs Hi-Spd USB 2.0 1:2 Mux/DeMux Sw Integrated Circuits

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Condition:
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Warranty:
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Package:
VSON-10
Mounting Style:
SMD/SMT
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TS3USB221EDRCR

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TS3USB221EDRCR USB Switch ICs

Introduction

 

 

TS3USB221EDRCR USB Switch ICs Hi-Spd USB 2.0 1:2 Mux/DeMux Sw Integrated Circuits

TS3USB221EDRCR USB Switch ICs Hi-Spd USB 2.0 1:2 Mux/DeMux Sw Integrated Circuits

Texas Instruments
Product Category: USB Switch ICs
RoHS: Details
USB 2.0 Multiplexers/Demultiplexers
2 x 1:2
6 Ohms
30 ns
17 ns
2.3 V to 3.6 V
- 40 C
+ 85 C
SMD/SMT
VSON-10
Reel
Cut Tape
MouseReel
Bandwidth: 1 GHz
Brand: Texas Instruments
Development Kit: TS3USB221EEVM
Moisture Sensitive: Yes
Number of Switches: 2 Switch
Operating Supply Current: 30 uA
Product Type: USB Switch ICs
Series: TS3USB221E
Subcategory: Switch ICs
Supply Voltage - Max: 3.6 V
Supply Voltage - Min: 2.3 V
Unit Weight: 0.001386 oz
 
Description
The TS3USB221E is a high-bandwidth switch specially designed for the switching of high-speed
USB 2.0 signals in handset and consumer applications, such as cell phones, digital cameras,
and notebooks with hubs or controllers with limited USB I/Os. The wide bandwidth (1 GHz) of this switch
allows signals to pass with minimum edge and phase distortion. The device multiplexes differential outputs
from a USB host device to one of two corresponding outputs. The switch is bidirectional and offers lttle or
no attenuation of the high-speed signals at the outputs. The TS3USB221E is designed for low bit-to-
bit skew and high channel-to-channel noise isolation, and is compatible with various standards, such as
high-speed USB 2.0 (480 Mbps).
The TS3USB221 E integrates ESD protection cells on all pins, is available in a SON package (3 mm x
3mm)aswellasinatinyμQFNpackage(2mm> 1.5 mm) and is characterized over the free-air temperature
range from - 40°C to 85°C.

 

 

Features
●Vcc operation of 2.3 V to 3.6 V
Switch l/Os accept signals up to 5.5 V
1.8-V compatible control-pin inputs
Low-power mode when OE Is disabled (1 μA)
ron= 6 Q maximum
OroN = 0.2 Q typical
●Cio(on)=7 pF maximum
Low power consumption (30 μA maximum)
ESD performance tested per JESD 22
---7000-V human body model(A114-B, Class I)
一1000-V charged-device model (C101)
ESD performance /O port to GND
---12-KV human body model (A114-B, Class I)
---+7- kV contact discharge (IEC 61000-4-2)
●High bandwidth (1 GHz typical)
 
Applications
●Routes signals for USB 1.0, 1.1, and 2.0
Mobile phones
Digital cameras
Notebooks
●USB I/0 expansion
MHL 1.0

 

TS3USB221EDRCR USB Switch ICs Hi-Spd USB 2.0 1:2 Mux/DeMux Sw Integrated Circuits

TS3USB221EDRCR USB Switch ICs Hi-Spd USB 2.0 1:2 Mux/DeMux Sw Integrated Circuits

 

TS3USB221EDRCR USB Switch ICs Hi-Spd USB 2.0 1:2 Mux/DeMux Sw Integrated Circuits

 

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