MT40A1G16KNR-075:E SDRAM DDR4 Memory IC 16Gbit Parallel 1.33 GHz 19 Ns Integrated Circuit
MT40A1G16KNR-075:E
,MT40A1G16KNR-075:E Memory IC
,SDRAM DDR4 Memory IC
MT40A1G16KNR-075:E SDRAM - DDR4 Memory IC 16Gbit Parallel 1.33 GHz 19 ns
| Micron Technology | |
| Product Category: | DRAM |
| RoHS: | Details |
| SDRAM - DDR4 | |
| SMD/SMT | |
| FBGA-96 | |
| 16 bit | |
| 1 G x 16 | |
| 16 Gbit | |
| 1.6 GHz | |
| 13.5 ns | |
| 1.26 V | |
| 1.14 V | |
| 118 mA | |
| 0 C | |
| + 95 C | |
| MT40A | |
| Tray | |
| Brand: | Micron |
| Moisture Sensitive: | Yes |
| Product Type: | DRAM |
| Subcategory: | Memory & Data Storage |
| Tradename: | TwinDie |
| Unit Weight: | 0.227649 oz |
Description
The 16Gb (TwinDie™) DDR4 SDRAM uses Micron's 8Gb DDR4 SDRAM die; two x8s combined to make
one x16. Similar signals as mono x16, there is one extra ZQ connection for faster ZQ Calibration and a
BG1 control required for x8 addressing. Refer to Micron's 8Gb DDR4 SDRAM data sheet (x8 option) for
the specifications not included in this document. Specifications for base part number MT40A1G8 correlate
to TwinDie manufacturing part number MT40A1G16.
Features
• Uses two x8 8Gb Micron die to make one x16
• Single rank TwinDie • VDD = VDDQ = 1.2V (1.14-1.26V)
• 1.2V VDDQ-terminated I/O
• JEDEC-standard ball-out
• Low-profile package
• TC of 0°C to 95°C - 0°C to 85°C: 8192 refresh cycles in 64ms - 85°C to 95°C: 8192 refresh cycles in 32ms
Options Configuration
- 64 Megx 16x 16 banksx 1 rank
96-ball FBGA package (Pb-free)
-9.5mmx14mmx1.2mmDieRev:A
-8.0mmx14mmx1.2mmDieRev:B,D
- 7.5mm x 13.5mm x 1.2mm Die Rev :E
Timing - cycle timel
- 0.625ns @ CL = 22 (DDR4-3200)
0.682ns @ CL= 21 (DDR4-2933)
- 0.750ns @ CL= 19 (DDR4-2666)
- 0.750ns @ CL= 18 (DDR4-2666)
- 0.833ns @ CL = 17(DDR4-2400)
- 0.833ns @ CL= 16 (DDR4-2400)
- 0.937ns @ CL= 15 (DDR4-2133)
- 1.071ns @ CL= 13 (DDR4- 1866)
Self refresh
- Standard
Operating temperature
-Commercial (0°C≤Tc≤95°C)
Revision
The MT40A1G16KNR-075:E is a specific part number for a memory module. Here is some information about the
MT40A1G16KNR-075:E based on the search results:
-
Manufacturer and Product:
-
Specifications:
- Capacity: The "1G" in the part number indicates a capacity of 1 Gigabit (Gb), which is equivalent to 128 Megabytes
- (MB) [2].
- Organization: The "16" in the part number represents the organization of the memory module, which is 16 bits [2].
- Speed: The "075" in the part number indicates the speed grade of the module. In this case, it corresponds to a data
- transfer rate of 2133 Megatransfers per second (MT/s) [2].
- Voltage: The "E" in the part number signifies the voltage level of the module, which is 1.2 volts [2].
-
Application:
- The MT40A1G16KNR-075:E memory module is commonly used in various electronic devices such as computers, servers, and other systems that require high-performance memory [2].
