2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)

manufacturer:
TOSHIBA
Description:
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
Category:
RF Transistors
In-stock:
2000pcs
Price:
Email us for details
Payment Method:
T/T, Western Union
Shipping Method:
LCL, AIR, FCL, Express
Specifications
Date Code:
Newest Code
Shipping By:
DHL/UPS/Fedex
Condition:
New*Original
Warranty:
365days
Lead Free:
Rohs Compliant
Lead Times:
Immediately Shipment
Package:
TO-3P-3
Mounting Style:
Through Hole
Introduction
2SC5200-O(Q) Bipolar (BJT) Transistor NPN 230 V 15 A 30MHz 150 W Through Hole
Toshiba | |
Product Category: | Bipolar Transistors - BJT |
RoHS: | Details |
Through Hole | |
TO-3P-3 | |
NPN | |
Single | |
230 V | |
230 V | |
5 V | |
400 mV | |
15 A | |
150 W | |
30 MHz | |
- | |
+ 150 C | |
2SC | |
Tray | |
Brand: | Toshiba |
Continuous Collector Current: | 15 A |
DC Collector/Base Gain hfe Min: | 55 |
DC Current Gain hFE Max: | 160 |
Height: | 26 mm |
Length: | 20.5 mm |
Product Type: | BJTs - Bipolar Transistors |
Subcategory: | Transistors |
Technology: | Si |
Width: | 5.2 mm |
Unit Weight: | 0.239863 oz |
Power Amplifier Applications
• High breakdown voltage: VCEO = 230 V (min)
• Complementary to 2SA1943
• Suitable for use in 100-W high fidelity audio amplifier’s output stage
Specifications
- Manufacturer: Toshiba
- Transistor Type: NPN
- Package Type: TO-3PL
- Maximum Power Dissipation: 150W
- Collector Emitter Voltage (VCEO): 230V
- Maximum Collector Current: 15A
- DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
- Frequency: 30MHz
- Mounting Type: Through Hole
- Operating Temperature: 150°C TJ
- Part Status: Obsolete
Related Products
Image | Part # | Description | |
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2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L) |
2SA1943-O(Q) Bipolar (BJT) Transistor PNP 230 V 15 A 30MHz 150 W Through Hole TO-3P(L)
|
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Stock:
2000pcs
MOQ:
1pcs