ISL6625ACRZ-T Half-Bridge Gate Driver IC Non-Inverting 8-DFN (2x2)
ISL6625ACRZ-T Half-Bridge Gate Driver IC Non-Inverting 8-DFN (2x2)
| Renesas Electronics | |
| Product Category: | Gate Drivers |
| RoHS: | Details |
| MOSFET Gate Drivers | |
| High-Side, Low-Side | |
| SMD/SMT | |
| 2 Driver | |
| 2 Output | |
| 20 mA | |
| 5.5 V | |
| 13.2 V | |
| 31 ns | |
| 18 ns | |
| 0 C | |
| + 70 C | |
| ISL6625A | |
| Reel | |
| Cut Tape | |
| Brand: | Renesas / Intersil |
| Height: | 0.9 mm |
| Length: | 2 mm |
| Moisture Sensitive: | Yes |
| Product Type: | Gate Drivers |
| Subcategory: | PMIC - Power Management ICs |
| Technology: | Si |
| Width: | 2 mm |
| Unit Weight: | 0.000388 oz |
The ISL6625A is a high frequency MOSFET driver designed todrive upper and lower power N-Channel
MOSFETs in asynchronous rectified buck converter topology.In ISL6625A, the upper and lower gates are
both driven to anexternally applied voltage. This provides the capability tooptimize applications involving
trade-offs between gate chargeand conduction losses.An advanced adaptive shoot-through protection is
integrated toprevent both the upper and lower MOSFETs from conductingsimultaneously and to minimize
dead time. The ISL6625A hasa 10kΩ integrated high-side gate-to-source resistor to preventself turn-on due
to high input bus dV/dt.This driver also has an overvoltage protection feature, which isoperational while VCC
is below the POR threshold. The PHASEnode is connected to the gate of the low-side MOSFET (LGATE)via
a 30kΩ resistor, limiting the output voltage of the converterclose to the gate threshold of the low-side MOSFET.
This isdependent on the current being shunted, which provides someprotection to the load should the upper
MOSFET(s) becomeshorted.
Applications
• High light load efficiency voltage regulators
• Core regulators for advanced microprocessors
• High current DC/DC converters
Features
• Dual MOSFET drives for synchronous rectified bridge
• Advanced adaptive zero shoot-through protection- PHASE detection- LGATE detection- Auto-Zero of rDS(ON) conduction offset effect
• Low standby bias current
• 36V internal bootstrap switcher
• Bootstrap capacitor overcharging prevention
• Integrated high-side gate-to-source resistor to prevent fromself turn-on due to high input bus dV/dt
• Pre-POR overvoltage protection for start-up and shutdown
• Power rails undervoltage protection
• Expandable bottom copper pad for enhanced heat sinking
• Dual flat no-lead (DFN) package- Near chip-scale package footprint; improves PCBefficiency and thinner in profile• Pb-Free (RoHS compliant)
